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RJK0206DPA Datasheet, Renesas Technology

RJK0206DPA fet equivalent, silicon n channel power mos fet.

RJK0206DPA Avg. rating / M : 1.0 rating-11

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RJK0206DPA Datasheet

Features and benefits

High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V)
* Pb-free
* Halog.

Application

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.

Image gallery

RJK0206DPA Page 1 RJK0206DPA Page 2 RJK0206DPA Page 3

TAGS
RJK0206DPA
Silicon
Channel
Power
MOS
FET
RJK0204DPA
RJK0208DPA
RJK0210DPA
Renesas Technology
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